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| Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 12 30 8 12 45 150 -65~150 ae ae UNIT V V V A A A A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN BU2527DF SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V VEBO VCEsat Emitter-base breakdown voltage IE=600mA ;IC=0 IC=8A ;IB=1.6A 7.5 13.5 V Collector-emitter saturation voltage 5.0 V VBEsat Emitter-base saturation voltage IC=8A ;IB=1.6A VCE=BVCES; VBE=0 TC=125ae VEB=6V; IC=0 110 1.1 1.0 2.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 11 hFE-2 CC DC current gain IC=8A ; VCE=5V IE=0 ; VCB=10V f=1MHz 5 10 Collector capacitance 145 pF VF Diode forward voltage IF=8A 2.0 V JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE BU2527DF Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) JMnic |
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